Delta-phase manganese gallium on gallium nitride: a magnetically tunable spintronic system
نویسندگان
چکیده
Ferromagnetic delta-phase manganese gallium with Mn:Ga ratio between 1:1 to 1.5:1 is grown on wurtzite gallium nitride and scandium nitride substrates, using molecular beam epitaxy. The dependencies of growth properties, e.g. interface formation, surface reconstruction and crystalline quality, on substrate crystallographic structure and polarity are investigated. Results suggest that for growth on wurtzite GaN, Ga-polar surface promotes quicker interface formation, and also results in better crystalline quality of the MnGa film, as compared to N-polar. The crystal orientation and magnetic anisotropy are found to be different than those grown on cubic scandium nitride substrates.
منابع مشابه
Epitaxial growth of ferromagnetic δ-phase manganese gallium on semiconducting scandium nitride (001)
Adam J. Hauser and Fengyuan Yang Department of Physics, The Ohio State University, 191 Woodruff Avenue, Columbus, Ohio 43210, USA (Dated: August 22, 2010) Abstract Ferromagnetic δ-phase manganese gallium layers with Mn/(Mn + Ga) = 60% have been successfully grown on ScN(001) by molecular beam epitaxy, expanding possibilities for ferromagnetic layers on nitride semiconductors. The in-plane epita...
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